CDBT0540-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBT0540-G
RoHS Device
Features
-Small surface mount type.
-Low reverse current and low forward voltage.
-High reliability.
Marking: D3A
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Peak surge forward voltage
IFSM
Mean rectifying current
IO
Power dissipation
PD
Thermal resistance, junction to ambient
RθJA
Junction temperature
TJ
Storage temperature
TSTG
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
VBR
IR=100μA
VF
IF=500mA
VR=10V
IR
VR=30V
VR=0V, f=1MHz
CT
VR=10V, f=1MHz
Value
40
40
3
0.5
250
500
125
-40 to +125
Unit
V
V
A
A
mW
O_C/W
O_C
O_C
Min
Typ.
Max
Unit
40
V
0.55
V
30
μA
50
μA
125
pF
20
pF
QW-BA016
Comchip Technology CO., LTD.
REV:B
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