CDBS120-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBS120-HF Thru. CDBS160-HF
Forward current: 1.0A
Reverse voltage: 20 to 60V
0805
RoHS Device
Halogen Free
0.083 (2.10)
0.075 (1.90)
Features
-Low power loss, High efficiency.
0.055 (1.40)
0.047 (1.20)
-High current capability, low VF
-Plastic package has underwriters laboratory
flammability classification 94V-0.
0.040(1.00)
Typ.
R 0.011(0.275)
Mechanical Data
-Case: Packed with FRP substrate and
epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free),solderable
per MIL-STD-750, method 2026.
-Polarity: Laser cathode band marking.
.-Weight: 0.005 grams (approx).
0.022 (0.55)
0.014 (0.35)
0.039 (1.00)
0.028 (0.70)
0.022(0.55)
0.014(0.35)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Parameter
Symbol
CDBS120-HF CDBS140-HF
Repetitive peak reverse voltage
VRM
20
40
Average forward current
IF(AV)
1
Peak forward surge current
@8.3ms single half sine-wave
IFSM
10
Operating junction temperature range
TJ
-55 to +125
Storage temperature
TSTG
-55 ~ +150
CDBS160-HF Unit
60
V
A
A
-55 to +150
°C
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Conditions Type
Symbol
Min.
Typ.
Max.
Forward voltage (Note1)
IF=0.1A
IF=0.5A
IF=1.0A
IF=0.1A
IF=0.5A
IF=1.0A
IF=0.1A
IF=0.5A
IF=1.0A
CDBS120-HF
CDBS140-HF
VF
CDBS160-HF
-
0.32
-
-
0.39
-
-
0.42
0.45
-
0.33
-
-
0.40
-
-
0.47
0.50
-
0.38
-
-
0.50
-
-
0.62
0.65
Reverse peak reverse current (Note1) VR=Max.VRRM, Ta=25°C
IRRM
-
0.028
0.20
Junction capacitance
VR=4V, f=1.0MHz
Cj
-
115
-
Thermal resistance
Junction to ambient (Note 2)
RΘJA
-
120
-
Junction to lead (Note 2)
RΘJL
-
28
-
Notes: (1) Pulse test width pw=300usec, 1% duty cycle.
(2) Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.
QW-JB059
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
Unit
V
mA
pF
ºC/W
ºC/W
REV:A
Page 1