CDBS0245 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBS0245
Io = 200 mA
VR = 45 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012) Standard package,
molded plastic .
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0048 gram. ( approximately)
COMCHIP
www.comchip.com.tw
0805(2012)
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
0.008(R0.20) Typ.
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50
V
VR
45
V
Io
200 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
3000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
-40
Tj
-40
250 mW
+125
C
+125
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 200 mADC
Reverse current
VR = 45 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.55 V
IR
30 uA
CT
10
pF
RDS0208015-C
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