CDBQR0140R-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBQR0140R-HF^{(RoHS Device)}
Io = 100 mA
VR = 40 Volts
SMD Diodes Specialist
Features
Halogen free.
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking Code: Cathode band & B9
Mounting position: Any.
Weight: 0.001 gram(approx.).
0402(1005)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Repetitive Peak reverse voltage
VRRM
45
V
Reverse voltage
VR
40
V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Power Dissipation
IO
IFSM
PD
100 mA
1
A
125 mW
Storage temperature
Junction temperature
TSTG
-40
Tj
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 10mA
VF
0.45 V
Reverse current
VR = 10V
IR
1
uA
Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage
CT
6
pF
QW-G1104
REV:A
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