CDBQR0130L-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBQR0130L-HF ^{(RoHS Device)}
Io = 100 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Halogen free.
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BP
Mounting position: Any.
Weight: 0.001 gram(approx.).
0402(1005)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
35
V
Reverse voltage
VR
30
V
Average forward current
Forward current,surge peak
Power Dissipation
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IO
IFSM
PD
100 mA
1
A
125 mW
Storage temperature
TSTG
-40
+125
O
C
Junction temperature
Tj
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 10 mA
VR = 10 V
Symbol _Min Typ _{Max Unit}
VF
0.35 V
IR
10
uA
QW-G1098
Comchip Technology CO., LTD.
REV:C
Page 1