CDBQR00340-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBQR00340-HF ^{(RoHS Device)}
Io = 30 mA
VR = 40 Volts
SMD Diodes Specialist
Features
Halogen free.
Designed for mounting on small surface.
Extremely thin package.
Low stored charge.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.001 gram(approx.).
0402(1005)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Repetitive peak reverse voltage
VRRM
45
V
Reverse voltage
VR
40
V
Average forward current
IO
30 mA
Forward current,surge peak
Power Dissipation
Sunction temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
PD
TSTG
Tj
500
-40
mA
200 mW
+125
O
C
+125
O
C
Electrical
Characteristics
(at
TA=25
O
C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 1 mA DC
VF
VR = 30V
Reverse current
IR
VR = 40V
Capacitance between terimnals F = 1 MHZ and 1 VDC reverse voltage
CT
0.37 V
0.50
uA
1.00
1.5
pF
QW-G1106
Comchip Technology CO., LTD.
REV:A
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