CDBN0245 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBN0245
Io = 200 mA
VR = 45 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 1206(3216) Standard package,
molded plastic .
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0085 gram. (approximately)
COMCHIP
www.comchip.com.tw
1206(3216)
0.126(3.20)
0.118(3.00)
0.020(0.50) Typ
0.010(R0.25) Typ.
0.063 (1.60)
0.055 (1.40)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50
V
VR
45
V
Io
200 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
3000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
-40
Tj
-40
250 mW
+125
C
+125
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 200 mADC
Reverse current
VR = 45 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.55 V
IR
30 uA
CT
10
pF
RDS0208016-C
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