CDBN0145 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBN0145
Io = 100mA
VR = 45 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 1206(3216)Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0085 gram. (approximately)
COMCHIP
www.comchip.com.tw
1206 (3216)
0.010(R0.25) Typ.
0.126(3.20)
0.118(3.00)
0.020(0.50) Typ.
0.063(1.60)
0.055(1.40)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
50
V
Reverse voltage
VR
45
V
Average forward current
Io
100 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
-40
Tj
-40
250 mW
+125 C
+125 ^C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 100 mA DC
Reverse current
VR = 45 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.55 V
IR
30 uA
CT
10
pF
RDS0208012-C
Page 1