CDBN00340 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBN00340
Io = 30mA
VR = 40 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 12063(3216)Standard package,
molded plastic.
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0085 gram. (approximately)
COMCHIP
www.comchip.com.tw
1206 (3216)
0.010(R0.25) Typ.
0.126(3.20)
0.118(3.00)
0.020(0.50) Typ.
0.063(1.60)
0.055(1.40)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
45
V
VR
40
V
Io
30
mA
Forward current, surge peak
Power Dissipation
Storage temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
PD
TSTG
Tj
500
mA
200 mW
-40
+125
C
-40
+125
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 1 mA DC
Reverse current
Reverse current
VR = 40 V
VR = 30 V
Capacitance between terminals f = 1MHz, and 1 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.37 V
IR
1.00 uA
IR
0.50 uA
CT
2
pF
RDS0208006-C
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