CDBN001A Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBN001A
Io = 100mA
VR = 30 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 1206(3216) Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Indicated by cathode band
Mounting position: Any
Weight: 0.0085 gram (approximately)
COMCHIP
www.comchip.com.tw
1206 (3216)
0.010(R0.25)Typ.
0.126(3.20)
0.118(3.00)
0.020(0.50) Typ.
0.063(1.60)
0.055(1.40)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at TA = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
Average forward current
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
VRRM, VR
IO
IFSM
30
V
100 ^mA
1000
mA
Capacitance between terminals F=1MHZ and 10 V DC reverse voltage
CT
6
pF
Power Dissipation
Storage temperature
PD
TSTG
-40
300 ^mW
+125 C
Junction temperature
Tj
-40
+125 C
Electrical Characteristics ( at TA = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage 1
Forward voltage 2
Forward voltage 3
Forward voltage 4
Forward voltage 5
Reverse current
IF = 0.1 mA DC
IF = 1 mA D C
IF = 10 m A DC
IF = 30 m A DC
IF = 100 mA DC
VR = 25 V
VF
0.24 V
VF
0.32 V
VF
0.40 V
VF
0.50 V
VF
1.00 V
IR
2
uA
RDS0208018-C
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