CDBMTS220-HF Datasheet, PDF (1/4 Pages) Comchip Technology – Low Profile SMD Schottky Barrier Rectifiers

Comchip Low Profile SMD Schottky Barrier Rectifiers
SMD Diode Specialist
CDBMTS220-HF Thru. CDBMTS2200-HF
Reverse Voltage: 20 to 200 Volts
Forward Current: 2.0 Amp
RoHS Device
Halogen Free
SOD-123S
Features
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile package is 40% thinner than standards
SOD-123.
-Low power loss,high efficiency.
-High current capability,low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
0.037(0.95)
0.029(0.75)
0.009(0.22)
0.007(0.18)
0.154(3.9)
0.138(3.5)
0.119(3.0)
0.103(2.6)
0.018(0.45) Typ.
0.079(2.0)
0.063(1.6)
0.041(1.05)
0.033(0.85)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant.
-Case: Molded plastic, SOD-123S/MINI SMA
-Terminals: Solderable per MIL-STD-750, Method 2026.
-Polarity: Indicated by cathode band.
-Mounting Position: any
-Weight: 0.0155 grams approx.
0.032(0.8) Typ.
0.032(0.8) Typ.
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol ^{CDBMTS CDBMTS CDBMTS CDBMTS CDBMTS CDBMTS CDBMTS CDBMTS CDBMTS} _Unit
220-HF 230-HF 240-HF 250-HF 260-HF 280-HF 2100-HF 2150-HF 2200-HF
Repetitive peak reverse voltage
VRRM
20
30
40
50
60
80 100 150 200 V
Continuous reverse voltage
VR
20
30
40
50
60
80 100 105 140 V
RMS voltage
VRMS
14
21
28
35
42
56
70
150 200 V
Maximum Forward rectified current IO
2.0
A
Maximum forward voltage
VF
@ IF=2.0A
Maximum forward surge current
8.3ms single half sine-wave
IFSM
superimposed on rated load
(JEDEC methode)
Maximum reverse ^TJ=25°C
Current (VR=VRRM)
IR
TJ=100°C
Typical diode Junction capacitance
(F=1MHz and applied 4V DC reverse voltage)
CJ
Operating temperature
TJ
Storage temperature range
TSTG
0.50
-55 to +125
0.70
0.85
50
0.5
20
160
-55 to +150
-65 to +175
0.92
V
A
mA
PF
°C
°C
QW-JB031
Comchip Technology CO., LTD.
REV: A
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