CDBMH120-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Rectifiers

SMD Schottky Barrier Rectifiers
CDBMH120-HF Thru. CDBMH1150-HF
Reverse Voltage: 20 to 150 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Heat sink bottom.
-Lead-free parts meet environmental standards of
MIL-STD-19500/228
SOD-123T
0.154(3.9)
0.138(3.5)
0.008(0.20) Typ.
0.094(2.4)
0.079(2.0)
0.024(0.6) Typ.
0.063(1.6)
0.047(1.2)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.067(1.7)
0.051(1.3)
0.039(1.0)
0.024(0.6)
0.035(0.9)
0.020(0.5)
Mechanical data
-Case: Molded plastic, SOD-123T/Mini SMA.
-Terminals: Solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.018 grams approx.
0.051(1.3)
0.035(0.9)
0.037(0.95)
0.030(0.75)
0.044(1.10)
0.028(0.70)
Dimensions in inches and (millimeter)
Maximum
Ratings
(at
O
TA=C25unless
otherwise
noted)
Parameter
Symbol ^{CDBMH CDBMH CDBMH CDBMH CDBMH CDBMH CDBMH CDBMH} Unit
120-HF 130-HF 140-HF 150-HF 160-HF 180-HF 1100-HF 1150-HF
Max. Repetitive peak reverse voltage
VRRM
20
30
40
50
60
80 100 150 V
Max. Continuous reverse voltage
VR
20
30
40
50
60
80 100 150 V
Max. RMS voltage
VRMS
14
21
28
35
42
56
70
105
V
Max. averaged forward current (see fig.1)
IO
1.0
A
Maximum Instantaneous forward
VF
0.50
voltage at IF=1.0A
0.70
0.85
0.92 V
Max. Forward surge current, 8.3ms single
half sine-wave superimposed on rated
IFSM
load (JEDEC method)
VR=VRRM TJ=25°C
IR
Max.Reverse current
VR=VRRM TJ=100°C IR
Typ. Thermal resistance (Junction to case) RθJC
30
A
0.2
mA
10
45
°C/W
Typ. Diode Junction capacitance (Note 1)
CJ
120
pF
Operating temperature
TJ
-55 to +125
-55 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
Note : 1. F=1MHz and applied 4V DC reverse voltage
QW-JB016
Comchip Technology CO., LTD.
REV:A
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