CDBM140LR-G Datasheet, PDF (1/4 Pages) Comchip Technology – Low VF Low IR SMD Schottky Barrier Rectifiers

Low VF Low IR SMD Schottky Barrier Rectifiers
CDBM140LR-G
Reverse Voltage: 40 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
-Low reverse leakage current.
-Hight current capability,Low forward voltage drop .
-Hight surge capability .
-Guardring for over voltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
SOD-123F
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.071(1.90)
0.055(1.50)
Mechanical data
-Case: SOD-123F, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026
-Polarity: Color band denotes cathode end.
-Weight: 0.0004 ounces, 0.010 grams
0.028(0.70) Typ.
0.067(1.70)
0.051(1.30)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Maximum Recurrent peak
reverse voltage
Maximum RMS Voltage
Conditions
DC Blocking voltage
Operating temperature
Symbol _Min Typ _{Max Unit}
VRRM
40
V
VRMS
28
V
VDC
40
V
TJ
-50
+125 _°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Average forward current
Forward current,surge peak
Forward voltage
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IF = 1 A
Reverse current
VR = 30 V , TA= 25°C
Thermal resistance
Junction to ambient
Diode Junction capacitance
f=1MHZ and applied 4V DC reverse voltage
Storage temperature
Symbol _Min Typ _{Max Unit}
IO
1
A
IFSM
30
A
VF
0.4 0.45
V
IR
200 uA
RθJA
98
°C/W
CJ
200
pF
TSTG
-50
+150 °C
QW-BL010
Comchip Technology CO., LTD.
REV:A
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