CDBK0520L Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBK0520L
Io = 500 mA
VR = 20 Volts
RoHS Device
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: SOD-123F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.011 gram(approx.).
SOD-123F
0.144(3.65)
0.136(3.45)
0.069(1.75)
0.061(1.55)
0.024(0.60) Typ.
0.035(0.90)
0.027(0.70)
0.057(1.45) Typ.
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Peak reverse voltage
VRM
20
V
Reverse voltage
VR
20
V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Storage temperature
IO
IFSM
TSTG
-40
0.5 A
5.5 A
+125
O
C
Junction temperature
Tj
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Conditions
O
IF = 100mA @Ta = 25 C
O
IF = 500mA @Ta = 25 C
O
IF = 100mA @Ta = 100 C
O
IF = 500mA @Ta = 100 C
O
VR = 10V @Ta = 25 C
O
VR = 20V @Ta = 25 C
f = 1 MHz, and 0 VDC reverse voltage
Symbol Min Typ Max Unit
300
385
VF
mV
220
330
75
IR
uA
250
CT
170 pF
Reverse recovery time
IF = IR = 10mA, Irr x IR, RL = 100ohm
Trr
22
ns
QW-A1095
Comchip Technology CO., LTD.
REV:A
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