CDBHD220-G Datasheet, PDF (1/4 Pages) Comchip Technology – Low VF SMD Schottky Bridge Rectifiers

Low VF SMD Schottky Bridge Rectifiers
CDBHD220-G Thru. CDBHD2100-G
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-Schottky barrier chips in TO-269AA bridge.
-Metal semiconductor junction with guard ring.
-Silicon epitaxial planar chips.
-Very low forward drop down voltage.
-For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications.
-Lead-free parts meet RoHS requirments.
-UL recognized file # E321971
Mechanical data
-Case: TO-269AA, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Marked on body.
-Mounting Position: Any.
-Weight:0.22 gram(approx.).
TO-269AA
~
~
MDS
XXX
+
.031(0.8)
.019(0.5)
.193(4.9)
.177(4.5)
.106(2.7)
.090(2.3)
.165(4.2)
.150(3.8)
.008(0.2)
.275(7.0)
MAX
.106(2.7)
.090(2.3)
.043(1.1)
.027(0.7)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak _reverse
voltage
Conditions
Symbol ^CDBHD
CDBHD
CDBHD
CDBHD
CDBHD
Units
220-G 240-G 260-G 280-G 2100-G
VRRM
20
40
60
80
100 V
Max. DC blocking voltage
VRMS
14
28
42
56
70
V
Max. RMS voltage
VR
Max. Instantaneous forward
VF
voltage at 2.0A
Average Forward rectified 2.0X2.0”(5.0x5.0mm) copper pad,
current
See fig.1
IAV
Peak Forward surge current ^{8.3ms single half sine-wave superimposed} IFSM
on rate load (JEDEC methode)
VR=VRRM TA=25°C
Reverse current
IR
VR=VRRM TA=100°C
Junction to ambient
RθJA
Thermal resistance
Junction to lead
RθJL
Diode junction capacitance f=1MHz and applied 4V DC reverse voltage CJ
Operating junction
temperature
TJ
Sorage temperature
TSTG
20
40
60
80
100 V
0.5
0.70
0.85
V
2.0
A
50
0.5
20
85
20
150
-55 to +125
-55 to +150
-65 to +175
A
mA
°C/W
pF
°C
°C
QW-BL011
Comchip Technology CO., LTD.
REV:B
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