CDBHD120L-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – Low VF Schottky Bridge Rectifiers

Low VF Schottky Bridge Rectifiers
CDBHD120L-G Thru. CDBHD1100L-G
Reverse Voltage: 20 to 100 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
- Low Vf Schottky barrier chips in bridge
- Metal-Semiconductor junction with guard ring
- High surge current capability
- Silicon epitaxial planar chips
- For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications
- Lead-free part, meet RoHS requirements
Mechanical data
- Case: Mini-Dip bridge (TO-269AA) plastic molded case
- Epoxy: UL94-V0 rated flame retardant
- Terminals: Solderable per MIL-STD-750 Method 2026
- Polarity: As marked on body
- Mounting Position: Any
- Weight: 0.0078 ounces, 0.22 grams
Mini DIP/To-269AA
.106(2.7)
.090(2.3)
C .02(0.5)
~
~
.043 (1.1)
.027 (0.7)
+
–
.031(0.8)
.019(0.5)
.193(4.90 )
.177(4.50 )
.067(1.7)
.05 7(1.3)
.016(0.41 )
.006 (0.15 )
.051 (1.3)
.035 (0.9)
.106 (2.7)
.090 (2.3)
.114(2.90)
.094(2.40 )
.008 (0.2)
Max.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CDBHD
120L-G
CDBHD
140L-G
CDBHD
160L-G
Maximum repetitive peak reverse voltage VRRM
20
40
60
Maximum DC blocking voltage
VDC
20
40
60
Maximum RMS voltage
VRMS
14
28
42
Peak surge forward current
8.3ms single half sine-wave superimposed
IFSM
on rate load (JEDEC method)
30.0
Max. average forward current
IAV
0.2*0.2”(5.0*5.0mm)copper pad area,see Figure 1
Max. instantaneous forward voltage at
VF
1.0A (Note 1)
Max. DC reverse current at ^TA=25°C
IR
rated DC blocking voltage
TA=100°C
IR
Typical junction Capacitance (Note 2)
CJ
0.44
250
1.0
0.625
0.50
20.0
Typical thermal resistance (Note 3)
RθJA
RθJL
85.0
20.0
Operating junction temperature Range
TJ
-55 to +125
Storage temperature Range
TSTG
-55 to +150
CDBHD
180L-G
80
80
56
CDBHD
1100L-G
100
Units
V
100
V
70
V
A
A
0.75
125
V
mA
PF
°C/W
°C
°C
Note 1. Pulse test: 300µS pulse width, 1% duty cycle
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2x0.2”(5.0x5.0mm) copper pad areas.
QW-BL009
Comchip Technology CO., LTD.
REV:B
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