CDBFR70 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBFR70^{(RoHs Device)}
Io = 70 mA
VR = 70 Volts
Features
Low forward Voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
SMD Diodes Specialist
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Peak reverse voltage
VRM
70
V
Reverse voltage
VR
70
V
RMS reverse voltage
VR(RMS)
49
V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
IO
IFSM
PD
70 mA
0.1 A
200 mW
Storage temperature
TSTG
-65
+125
O
C
Junction temperature
Tj
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
IF = 1mA
Forward voltage
VF
IF = 15mA
Reverse current
VR = 50V
IR
Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage
CT
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
Trr
0.41
V
1
0.1 uA
2
pF
5
nS
QW-A1087
REV:A
Page 1