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CDBFR0520L Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
CDBFR0520L(RoHs Device)
IO = 500 mA
VR = 20 Volts
SMD Diodes Specialist
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
20
V
Reverse voltage
VR
20
V
Average forward rectified current
IO
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
Storage temperature
TSTG
-40
Junction temperature
Tj
0.5 A
5.5 A
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Conditions
O
IF = 100mA @Ta = 25 C
O
IF = 500mA @Ta = 25 C
O
IF = 100mA @Ta = 100 C
O
IF = 500mA @Ta = 100 C
O
VR = 10V @Ta = 25 C
O
VR = 20V @Ta = 25 C
f = 1 MHz, and 0 VDC reverse voltage
Symbol Min Typ Max Unit
300
VF
385 mV
220
330
75
IR
250 uA
CT
170 pF
Reverse recovery time
IF = IR = 10mA, Irr x IR, RL = 100ohm
Trr
22
ns
QW-A1078
REV:A
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