CDBFR0245 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBFR0245^{(RoHs Device)}
Io = 200 mA
VR = 45 Volts
SMD Diodes Specialist
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current( IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
50
V
VR
45
V
IO
200 ^mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
3000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
-40
Tj
-40
250 mW
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Forward voltage
IF = 200 mA DC
Reverse current
VR = 10 V
Capacitance between terminals f = 1 MHZ, and 10VDC reverse voltage
Symbol _Min Typ _{Max Unit}
VF
0.55 V
IR
1
uA
CT
9
PF
QW-A1073
REV:A
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