CDBFR0140L Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBFR0140L ^{(RoHs Device)}
Io = 100 mA
VR = 40 Volts
SMD Diodes Specialist
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
Molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Repetitive Peak reverse voltage
VRRM
45
V
Reverse voltage
VR
40
V
Average forward rectified current
IO
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
Storage temperature
TSTG
-40
Junction temperature
Tj
100 mA
1
A
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
IF = 100mA
IF = 10mA
VR = 10V
0.55
VF
0.34 ^V
IR
30
uA
Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage
CT
6
pF
QW-A1059
REV:A
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