CDBFR001A Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBFR001A ^{(RoHs Device)}
Io = 100mA
VR = 30 Volts
SMD Diodes Specialist
Preliminary
Features
Designed for mounting on small surface.
Extremely thin package.
Low stored charge.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Repetitive Peak reverse voltage
VRRM, VR
30
V
Average forward current
IO
100 mA
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
500
mA
Power Dissipation
PD
150 mW
Sunction temperature
TSTG
-40
+125
O
C
Junction temperature
Tj
+125
O
C
Electrical
Characteristics
(at
TA=25
O
C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage 1
IF = 0.1 mA DC
VF
0.24 V
Forward voltage 2
IF = 1 mA DC
VF
0.32 V
Forward voltage 3
IF = 10 mA DC
VF
0.40 V
Forward voltage 4
IF = 30 mA DC
VF
0.50 V
Forward voltage 5
IF = 100 mA DC
VF
1.00 V
Reverse current
VR = 25V
IR
2
uA
Capacitance between terimnals F = 1 MHZ and 10 VDC reverse voltage
CT
6
pF
QW-A1053
REV:A
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