CDBFN120-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Rectifiers

SMD Schottky Barrier Rectifiers
CDBFN120-G Thru. CDBFN1100-G
Voltage: 20 to 100 Volts
Current: 1.0 Amp
RoHS Device
Features
-Batch process design, excellent power dissipation
offers better reverse leakage current.
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Very iny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mechanical data
-Case: JEDEC SOD-323, Molded plastic
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.008 gram(approx.).
SOD-323
0.106 (2.70)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol ^{CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN} Unit
120-G 130-G 140-G 150-G 160-G 180-G 1100-G
Repetitive peak reverse voltage
VRRM
20
30
40
50
60
80
100
V
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70
V
Continuous reverse voltage
VR
20
30
40
50
60
80
100
V
Maximum forward voltage @IF=1.0A
VF
0.55
0.70
0.85
V
Forward rectified current
IO
1.0
A
Forward surge current, 8.3ms half sine wave
IFSM
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
O
@TA=25 C
O
IR
@TA=125 C
Typ. thermal resistance, junction to ambient air
RθJA
30
A
0.5
mA
10
90
O_C/W
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
CJ
TJ
TSTG
120
-55 to +125
-65 to +150
QW-BB022
Comchip Technology CO., LTD.
-55 to +150
pF
O_C
O_C
REV:E
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