CDBF42 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF42/43 ^{(RoHs Device)}
Io = 200 mA
VR = 30 Volt s
Features
Low forward Voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
COMCHIP
SMD Diodes Specialist
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.020(0.50) Typ.
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25^OC unless otherwise noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Peak reverse voltage
VRM
30
V
Reverse voltage
VR
30
V
RMS reverse voltage
VR(RMS)
21
V
Average forward rectified current
IO
200 mA
Repetitive peak forward current
IFRM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
Power Dissipation
PD
Thermal resistance junction
to ambient air
R JA
Storage temperature
TSTG
-55
0.5
A
4
A
200 mW
500 ^OC/W
+125 ^OC
Junction temperature
Tj
+125 ^OC
Electrical Characteristics (at TA=25^OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
CDBF42/43
CDBF42
CDBF42
CDBF43
CDBF43
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
VR = 25V
1
0.4
VF
0.65 V
0.33
0.45
IR
0.5 uA
Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage
CT
10 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
5
nS
QW-A1044
REV:A
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