CDBF40 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF40 ^{(RoHs Device)}
Io = 200 mA
VR = 40 Volts
Features
Low forward Voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
SMD Diodes Specialist
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Peak reverse voltage
VRM
40
V
Reverse voltage
VR
40
V
RMS reverse voltage
VR(RMS)
28
V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IO
IFSM
Power dissipation
PD
Storage temperature
TSTG
-65
Junction temperature
Tj
200 mA
0.6 A
200 mW
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
IF = 1mA
IF = 40mA
VR = 30V
0.38
VF
V
1
IR
0.2 uA
Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage
CT
5
pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
5
nS
QW-A1042
REV:A
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