CDBF0540 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF0540
IO = 500 mA
VR = 40 Volt s
Features
(Lead-free Device)
COMCHIP
SMD Diodes Specialist
Low forward Voltage
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Case: SOD-323F (2512) Standard
package , molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.006 gram (approximately).
0.021(0.55) Typ.
0.035(0.90)
0.027(0.70)
0.012 (0.30) Typ.
0.039(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
40
V
Reverse voltage
VR
Average forward rectified current
Io
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
Storage temperature
TSTG
-40
40
V
500 mA
5.5
A
+125 C
Junction temperature
Tj
-40
+125 C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
Reverse current
IF = 0.5 A @Ta=25 C
IF = 1 A @Ta=25 C
IF = 0.5 A @Ta=100 C
IF = 1 A @Ta=100 C
VR = 20 V @ Ta= 25 C
VR = 40 V @ Ta= 25 C
VR = 20 V @Ta=100 C
VR = 40 V @Ta=100 C
Capacitance between terminals f = 1MHz, and 0 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.51 V
VF
0.64 V
VF
0.46 V
VF
0.62 V
IR
10
uA
IR
20
uA
IR
2
mA
IR
5
mA
CT
170
pF
Reverse recovery time
IF=IR=10mA,Irr= 0.1 X IR,RL=100 ohm
Trr
22
ns
QW-A1040
REV:A
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