CDBF0245 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF0245 ^{(Lead-free Device)}
Io = 200 mA
VR = 45 Volt s
Features
COMCHIP
SMD Diodes Specialist
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Mechanical data
Case: 1005 (2512) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.006 gram (approximately).
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.012 (0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50
V
VR
45
V
Io
200 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
3000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
-40
Tj
-40
250 mW
+125 C
+125 C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 200 mADC
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.55 V
IR
1
uA
CT
9
pF
QW-A1034
REV:A
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