CDBF0145-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF0145-HF ^{(RoHS Device)}
Io = 100 mA
VR = 45 Volts
SMD Diodes Specialist
Features
Halogen free.
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current.
(IR=0.1uA typ.@VR=10V)
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & B4
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Repetitive peak reverse voltage
VRRM
50
V
Reverse voltage
VR
45
V
Average forward current
IO
100 mA
Forward current,surge peak
Power Dissipation
Sunction temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
PD
TSTG
Tj
1000
mA
250 mW
-40
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 100 mA DC
VF
0.55 V
Reverse current
VR = 10V
IR
Capacitance between terimnals F = 1 MHZ and 10 VDC reverse voltage
CT
1
uA
9
pF
QW-G1062
Comchip Technology CO., LTD.
REV:A
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