CDBF0140R Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF0140R ^{(Lead-free Device)}
Io = 100 mA
VR = 40 Volt s
COMCHIP
SMD Diodes Specialist
Features
Low forward Voltage
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005 (2512) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.006 gram (approximately).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.012 (0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Peak reverse voltage
Reverse voltage
Average forward rectified
current
Forward current , surge peak
Conditions
Symbol Min Typ Max Unit
VRM
45
V
VR
40
V
Io
100 mA
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1
A
Storage temperature
Junction temperature
TSTG
-40
Tj
-40
+125 C
+125 C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 10 mA
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.45 V
IR
1
uA
CT
6
pF
QW-A1016
REV:A
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