CDBF0130L Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBF0130L ^{(RoHS Device)}
Io = 100 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BP
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
35
V
VR
30
V
IO
100 ^mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
1
A
Storage temperature
Junction temperature
TSTG
-40
Tj
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 10 mA
VR = 10 V
Symbol _Min Typ _{Max Unit}
VF
0.35 V
IR
10
uA
QW-A1111
Comchip Technology CO., LTD.
REV:A
Page 1