CDBER70 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBER70^{(RoHs Device)}
Io = 70 mA
VR = 70 Volts
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case: 0503(1308) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.002 gram(approx.).
SMD Diodes Specialist
0503(1308)
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.016(0.40) Typ.
0.030(0.75)
0.024(0.60)
0.022(0.55) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _{Min Typ Max Unit}
Peak reverse voltage
VRM
70
V
Reverse voltage
VR
70
V
RMS reverse voltage
VR(RMS)
49
V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
IO
IFSM
PD
70 mA
0.1 A
150 mW
Storage temperature
TSTG
-65
+125
O
C
Junction temperature
Tj
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
IF = 1mA
Forward voltage
VF
IF = 15mA
Reverse current
VR = 50V
IR
Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage
CT
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
Trr
0.41
V
1
0.1 uA
2
pF
5
nS
QW-A1093
Comchip Technology CO., LTD.
REV:A
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