CDBER0230R Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBER0230R^{(RoHS Device)}
Io = 200 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0503(1308) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BB
Mounting position: Any
Weight: 0.002 gram(approx.).
0503(1308)
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.016(0.40) Typ.
0.030(0.75)
0.024(0.60)
0.022(0.55) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
35
V
VR
30
V
IO
200 ^mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
1
A
Storage temperature
Junction temperature
TSTG
-40
Tj
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol _Min Typ _{Max Unit}
VF
0.6
V
IR
1
uA
QW-A1100
Comchip Technology CO., LTD.
REV:A
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