CDBER00340 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBER00340
Io = 30 mA
VR = 40 Volts
RoHS Device
Features
-Designed for mounting on small surface.
-Extremely thin package.
-Low stored charge.
-Majority carrier conduction.
Mechanical data
-Case: 0503/SOD-723F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & B2
-Mounting position: Any
-Weight: 0.002 gram(approx.).
0503/SOD-723F
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.016(0.40) Typ.
0.030(0.75)
0.024(0.60)
0.022(0.55) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Repetitive peak reverse voltage
VRRM
45
V
Reverse voltage
VR
40
V
Average forward current
IO
30 mA
Forward current,surge peak
Power Dissipation
Sunction temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
PD
TSTG
Tj
500
-40
mA
150 mW
+125
O
C
+125
O
C
Electrical
Characteristics
(at
TA=25
O
C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 1 mA DC
VF
VR = 30V
Reverse current
IR
VR = 40V
Capacitance between terimnals F = 1 MHZ and 1 VDC reverse voltage
CT
0.37 V
0.50
uA
1.00
1.5
pF
QW-A1088
Comchip Technology CO., LTD.
REV:B
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