CDBB220-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Rectifiers

SMD Schottky Barrier Rectifiers
CDBB220-HF Thru. CDBB2100-HF
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Halogen Free
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AA / SMB
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.091 grams
DO-214AA (SMB)
0.087 (2.20)
0.075 (1.90)
0.098 (2.50)
0.083 (2.10)
0.063 (1.60)
0.028 (0.70)
0.189 (4.80)
0.157 (4.00)
0.220 (5.60)
0.197 (5.00)
0.157 (4.00)
0.130 (3.30)
0.012 (0.31)
MAX.
0.008(0.21)
MAX.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol
CDBB
220-HF
CDBB
240-HF
Max. Repetitive peak reverse voltage
VRRM
20
40
CDBB
260-HF
60
Max. DC blocking voltage
VDC
20
40
60
Max. RMS voltage
Max. instantaneous forward voltage
@2.0A, TA=25°C
Operating Temperature
VRMS
VF
TJ
14
0.45
28
42
0.50
0.70
-50 to +150
CDBB
2100-HF
100
100
70
0.81
Units
V
V
V
V
°C
Parameter
Conditions
Symbol
Forward rectified current see Fig.1
IO
8.3ms single half sine-wave superimposed
Forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse Current
VR =VRRM TA=100°C
IR
Thermal Resistance
Junction to ambient
RθJA
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
QW-JB019
Comchip Technology CO., LTD.
TYP.
50
30
MAX.
2.0
50
0.5
20
+175
Units
A
A
mA
mA
°C/W
pF
°C
REV: C
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