CDBB120SL-HF Datasheet, PDF (1/4 Pages) Comchip Technology – Super Low VF SMD Schottky Barrier Rectifiers

Super Low VF SMD Schottky Barrier Rectifiers
CDBB120SL-HF Thru. CDBB140SL-HF
Reverse Voltage: 20 to 40 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-Hight current capability, low forward voltage drop.
-Hight surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
DO-214AA (SMB)
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
0.157 (4.00)
0.157 (4.00)
0.130 (3.30)
0.012 (0.31)
MAX.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AA / SMB
-Terminals: Gold plated, solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.091 grams
0.098 (2.50)
0.083 (2.10)
0.063 (1.60)
0.028 (0.70)
0.220 (5.60)
0.197 (5.00)
0.008(0.21)
MAX.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol CDBB120SL-HF
CDBB130SL-HF
Max. Repetitive peak reverse voltage
VRRM
20
Max. DC blocking voltage
VDC
20
Max. RMS voltage
VRMS
14
Max. instantaneous forward voltage @
1.0A, TA=25°C
VF
Operating Temperature
TJ
30
30
21
0.33
-50 to +100
CDBB140SL-HF Units
40
V
40
V
28
V
V
°C
Parameter
Conditions
Symbol
Forward rectified current see Fig.1
IO
8.3ms single half sine-wave superimposed
Forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse current
VR =VRRM TA=100°C
IR
Thermal resistance
Junction to ambient
RθJA
Diode junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
QW-JL025
Comchip Technology CO., LTD.
TYP.
70
160
MAX.
1.0
30
1.0
20
+150
Units
A
A
mA
mA
°C/W
pF
°C
REV: A
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