CDBB1150-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Rectifiers

SMD Schottky Barrier Rectifiers
CDBB1150-HF Thru. CDBB1200-HF
Reverse Voltage: 150 to 200 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
DO-214AA (SMB)
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-Hight current capability, low forward voltage drop.
-Hight surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AA / SMB
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.091 grams
0.087 (2.20)
0.075 (1.90)
0.098 (2.50)
0.083 (2.10)
0.063 (1.60)
0.028 (0.70)
0.189 (4.80)
0.157 (4.00)
0.220 (5.60)
0.197 (5.00)
0.157 (4.00)
0.130 (3.30)
0.012 (0.31)
MAX.
0.008(0.21)
MAX.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol
CDBB
1150-HF
CDBB
Unit
1200-HF
Max. repetitive peak reverse voltage
VRRM
150
200
V
Max. DC blocking voltage
VDC
150
200
V
Max. RMS voltage
Max. instantaneous forward voltage @
1.0A, TA=25°C
Operating Temperature
VRMS
VF
TJ
105
140
V
0.87
0.90
V
-50 to +175
°C
Parameter
Conditions
Symbol
forward rectified current see Fig.1
IO
8.3ms single half sine-wave superimposed
forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse Current
VR =VRRM TA=100°C
IR
Thermal Resistance
Junction to ambient
RθJA
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
QW-JB035
Comchip Technology CO., LTD.
TYP.
88
120
MAX.
1.0
30
0.5
20
+175
Units
A
A
mA
mA
°C/W
pF
°C
REV:A
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