CDBA2150-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Rectifiers

SMD Schottky Barrier Rectifiers
CDBA2150-HF Thru. CDBA2200-HF
Reverse Voltage: 150 to 200 Volts
Forward Current: 2.0 Amp
RoHS Device
Halogen Free
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
DO-214AC (SMA)
0.067 (1.70)
0.047 (1.20)
0.181 (4.60)
0.157 (4.00)
0.114 (2.90)
0.083 (2.10)
0.012 (0.30)
TYP.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
0.098 (2.50)
0.067 (1.70)
0.061 (1.55)
0.030 (0.75)
0.008(0.20)
0.004(0.10)
0.209 (5.30)
0.185 (4.70)
Dimensions in inches and (millimeter)
-weight: 0.055 grams
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol
CDBA
2150-HF
Max. repetitive peak reverse voltage
VRRM
150
CDBA
Unit
2200-HF
200
V
Max. DC blocking voltage
VDC
150
200
V
Max. RMS voltage
VRMS
105
140
V
Max. instantaneous forward voltage @ 2.0A, TA=25°C
VF
0.87
0.90
V
Operating Temperature
TJ
-50 to +175
°C
Parameter
Conditions
Symbol
Forward rectified current see Fig.1
IO
8.3ms single half sine-wave superimposed
Forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse Current
VR =VRRM TA=100°C
IR
Thermal Resistance
Junction to ambient
RθJA
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
QW-JB020
Comchip Technology CO., LTD.
TYP.
50
30
MAX.
2.0
50
0.5
20
+175
Unit
A
A
mA
mA
°C/W
pF
°C
REV: C
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