CDBA120SL-G_15 Datasheet, PDF (1/4 Pages) Comchip Technology – Super Low VF SMD Schottky Barrier Rectifiers

Super Low VF SMD Schottky Barrier Rectifiers
CDBA120SL-G
Reverse Voltage: 20 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA-F
-Terminals: Solder plated, solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.064 grams (Approx.)
Circuit Diagram
1
2
SMA-F
0.062 (1.60)
0.055 (1.40)
0.181 (4.60)
0.157 (4.00)
0.114 (2.90)
0.098 (2.50)
0.096 (2.44)
0.079 (2.00)
0.060 (1.52)
0.030 (0.78)
0.012 (0.30)
0.006 (0.15)
0.008(0.20)
0.002(0.05)
0.208 (5.28)
0.189 (4.80)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol
CDBA120SL-G
Max. Repetitive peak reverse voltage
Max. RMS voltage
Max. Continuous reverse voltage
Max. Forward voltage @IF=1.0A
Operating Temperature
VRRM
VRMS
VR
VF
TJ
20
14
20
0.31
-55 to +100
Units
V
V
V
V
°C
Parameter
Conditions
Symbol MIN.
TYP.
MAX.
Forward rectified current See Fig.1
IO
8.3ms single half sine-wave superimposed
Forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse current
VR =VRRM TA=100°C
IR
Thermal resistance
Junction to ambient
RθJA
1.0
30
1.0
20
70
Diode junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
160
Storage temperature
TSTG
-55
+150
Company reserves the right to improve product design , functions and reliability without notice.
QW-BL015
Comchip Technology CO., LTD.
Units
A
A
mA
mA
°C/W
pF
°C
REV: A
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