CDBA120L-HF Datasheet, PDF (1/4 Pages) Comchip Technology – Low VF SMD Schottky Barrier Rectifiers

Low VF SMD Schottky Barrier Rectifiers
CDBA120L-HF Thru. CDBA140L-HF
Reverse Voltage: 20 to 40 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.055 grams
DO-214AC (SMA)
0.067 (1.70)
0.047 (1.20)
0.181 (4.60)
0.157 (4.00)
0.114 (2.90)
0.083 (2.10)
0.098 (2.50)
0.067 (1.70)
0.061 (1.55)
0.030 (0.75)
0.012 (0.30)
TYP.
0.008(0.20)
0.004(0.10)
0.209 (5.30)
0.185 (4.70)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol
CDBA
120L-HF
CDBA
130L-HF
Max. Repetitive peak reverse voltage
VRRM
20
30
Max. DC blocking voltage
VDC
20
30
Max. RMS voltage
Max. instantaneous forward voltage @
1.0A, TA=25°C
Operating Temperature
VRMS
VF
TJ
14
21
0.38
-50 to +100
CDBA
140L-HF
40
40
28
0.40
Units
V
V
V
V
°C
Parameter
Conditions
Symbol
Forward rectified current see Fig.2
IO
8.3ms single half sine-wave superimposed
Forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse current
VR =VRRM TA=100°C
IR
Thermal resistance
Junction to ambient
RθJA
Diode junction apacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
QW-JL006
Comchip Technology CO., LTD.
TYP.
80
130
MAX.
1.0
30
1.0
20
+150
Units
A
A
mA
mA
°C/W
pF
°C
REV:B
Page 1