C1815-G Datasheet, PDF (1/2 Pages) Comchip Technology – General Purpose transistors

General Purpose Transistors
C1815-G (NPN)
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Power dissipation
PCM=0.2W
Marking: HF
Collector
3
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
1
Base
2
Emitter
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
Dimensions in inches and (millimeter)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage
VCBO
-60
Collector-Emitter voltage
VCEO
-50
Emitter-Base voltage
VEBO
-5
Collector current-continuous
IC
150
Total device dissipation
PD
200
Junction and storage temperature range
TJ,TSTG
-55 to +150
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Symbol Conditions
Min
Typ.
Max
V
V
V
mA
mW
O_C
Unit
Collector-Base breakdown voltage
V(BR)CBO IC=100μA, IE=0
60
Collector-Emitter breakdown voltage
V(BR)CEO IC=100μA, IB=0
50
Collector cut-off current
ICBO
VCB=60V, IE=0
Collector cut-off current
ICEO
VCE=50V, IB=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=6V, IC=2mA
130
Collector-Emitter saturation voltage
VCE(SAT) IC=100mA, IB=10mA
Base-Emitter saturation voltage
VBE(SAT) IC=100mA, IB=10mA
Transition frequency
fT
VCE=10V, IC=1mA
80
f=30MHz
Classification of hFE
Rank
Range
L
130 ~ 200
QW-BTR23
0.1
0.1
0.1
400
0.25
1
V
V
A
μA
μA
V
V
MHz
H
200 ~ 400
REV:A
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