BTC4505N3 Datasheet, PDF (1/3 Pages) Comchip Technology – High Voltage Transistor (NPN)

High Voltage Transistor (NPN)
BTC4505N3
Features
High breakdown voltage. (BVceo =400V)
Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA
C
COMCHIP
www.comchiptech.com
COLLECTOR
3
1
BASE
2
EMITTER
.119 (3.0)
.110 (2.8)
.020 (0.5)
SOT-23
Top View
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
MDS0405003A
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limit
Unit
400
V
400
V
6
V
300
mA
0.225
W
150
°C
-55~+150
°C
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