BC846W-G Datasheet, PDF (1/6 Pages) Comchip Technology – Small Signal Transistor

Small Signal Transistor
BC846W-G Thru. BC848W-G (NPN)
RoHS Device
Features
- Power dissipation
PCM: 0.15W (@TA=25°C)
- Collector current
ICM: 0.1A
- Collector-base voltage
VCBO: BC846W=80V
BC847W=50V
BC848W=30V
Mechanical data
- Case: SOT-323, molded plastic.
- Terminals: solderable per MIL-STD-750,
method 2026.
- Approx. weight: 0.008 grams
Circuit diagram
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
3
SOT-323
0.053(1.35)
0.045(1.15)
0.043(1.10)
0.035(0.90)
0.087(2.20)
0.079(2.00)
3
1
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.016(0.40)
0.008(0.20)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
1
2
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
BC846W-G
Collector-Base voltage
BC847W-G
VCBO
BC848W-G
BC846W-G
Collector-Emitter voltage
BC847W-G
VCEO
BC848W-G
Emitter-Base voltage
BC846W-G / BC847W-G
BC848W-G
VEBO
Collector current -continuous
IC
Collector power dissipation
PC
Thermal resistance from junction to ambient
RΘJA
Junction temperature range
TJ
Storage temperature range
TSTG
Value
80
50
30
65
45
30
6
5
0.1
150
833
150
-55 to +150
Units
V
V
V
A
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR35
Comchip Technology CO., LTD.
REV:B
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