BC846AW-G Datasheet, PDF (1/5 Pages) Comchip Technology – Small Signal Transistor

Small Signal Transistor
BC846AW-G Thru. BC848CW-G (NPN)
RoHS Device
Features
-Power dissipation
PCM: 0.15W (@TA=25°C)
-Collector current
ICM: 0.1A
-Collector-base voltage
VCBO: BC846W=80V
BC847W=50V
BC848W=30V
-Operating and storage junction temperature
range: TJ, TSTG= -55 to +150°C
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
SOT-323
0.053(1.35)
0.045(1.15)
0.039 (1.00)
0.035 (0.90)
0.087 (2.20)
0.079 (2.00)
3
1
2
0.055 (1.40)
0.047 (1.20)
0.006 (0.15)
0.003 (0.08)
0.096 (2.45)
0.085 (2.15)
0.016 (0.40)
0.008 (0.20)
0.004 (0.10) max
0.018 (0.46)
0.010 (0.26)
Dimensions in inches and (millimeter)
1
2
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
BC846W-G
Collector-Base Voltage
BC847W-G
VCBO
BC848W-G
BC846W-G
Collector-Emitter Voltage
BC847W-G
VCEO
BC848W-G
Emitter-Base Voltage
BC846W-G / BC847W-G
BC848W-G
VEBO
Collector Current -Continuous
IC
Collector Power Dissipation
PC
Junction Temperature
TJ
Storage Temperature Range
TSTG
Value
80
50
30
65
45
30
6
5
0.1
150
150
-55 to +150
Units
V
V
V
A
mW
O
C
O
C
QW-BTR35
Comchip Technology CO., LTD.
REV:A
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