BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

Surface Mount Schottky Diode
COMCHIP
www.comchip.com.tw
BAS40 Thru BAS40-06
Voltage: 40 Volts
Power: 200mW
Features
Low Turn-on Voltage
Low Forward Voltage - 0.5V(Max) @ IF = 30 mA
Very Low Capacitance - Less Than 5.0pF @ 1V
For high speed switching application, circuit
protection
Mechanical data
Case: SOT-23, Molded Plastic
Weight: 0.008 grams (approx.)
Mounting Position: Any
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
BAS40
ANODE
1
3
2
CATHODE
3
CATHODE
ANODE
1
2
ANODE
BAS40-05
BAS40-04
CATHODE
ANODE
1
3
ANODE
2
CATHODE
ANODE
3
ANODE
CATHODE
1
2
CATHODE
BAS40-06
1
2
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Rating
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Surge Forward Current at tp < 1 s, Tamb = 25°C
Power Dissipation(1) at Tamb = 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature Range
Symbol
V_RRM
I_F
I_FSM
P_tot
R_thJA
T_j
T_S
Value
40
200(1)
600(1)
200(1)
430(1)
150
–55 to +150
Units
V
mA
mA
mW
°C/W
°C
°C
Electrical Characterics (TA = 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Leakage Current
Symbol Test Condition
Min
V(BR)R IR =10µA (pulsed) 40.0
IR
Pulse Test tp < 300µs
VR = 30V
-
Forward Voltage
Capacitance
Reverse Recovery Time
Pulse Test tp < 300µs
VF
IF = 1mA
-
IF = 40mA
-
Ctot
VR = 0V
f = 1MHz
-
Trr
IF = 10mA, IR = 10mA
Irr = 1mA, RL = 100Ÿ
-
Note: (1) Device on fiberglass substrate, see layout on next page.
Typ Max Units
-
-
V
20 100.0 nA
-
380 mV
- 1000 mV
40
5
pF
-
5
nS
MDS0211002A
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