BAS21 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT DIODE

Surface Mount Switching Diode
BAS21
Voltage: 250 Volts
Current: 0.2Amp
COMCHIP
www.comchip.com.tw
Feature
High Voltage Switching Diode
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching
Applications
Mechanical Data
Case: SOT -23, Plastic
Terminals : Solderable per NIL-STD -202,
Method 208
Approx. Weight: 0.008 gram
.119 (3.0)
.110 (2.8)
.020 (0.5)
SOT-23
Top View
.037(0.95) .037(0.95)
Maximum Ratings
Continuous Reverse Voltage
Peak Forward Current
Peak Surge Forward Current
Rating
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Symbol
V_R
I_F
I_FSM(surge)
Value
250
200.0
625
Units
V_DC
mAdc
mAdc
Thermal Characteristics
Characteristic
Total Device Dissipation FR– 5 Board(1)
Derate above 25°C
T_A = 25°C
Thermal Resistance, Junction to Am bient
Total Device Dissipation Alumina Substrate,(2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Am bient
Junction and Storage Temperature
Symbol
P_D
R _JA
P_D
R _JA
T_J, T_stg
Max
225.0
1.8
556.0
300
2.4
417
–55 to +150
Units
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Voltage Leakage Current
V_R = 200 Vdc
V_R = 200 Vdc, TJ = 150°C
I_R
-
-
Reverse Breakdown Voltage (BR = 100 Adc)
V(BR)
250
Forward Voltage
F = 100 mAdc
VF
F = 200 mAdc
Diode Capacitance (V_R = 0, f = 1.0 MHz))
C_D
Reverse Recovery Time (I_F = IR = 30 mAdc, RL = 100 )
Trr
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
Max
1.0
100
-
1000
1250
5
50
Units
uAdc
Vdc
mV
pF
nS
MDS0209006A
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