ACDST-16-G Datasheet, PDF (1/4 Pages) Comchip Technology – Small Signal Switching Diodes

Small Signal Switching Diodes
ACDST-16-G
Reverse Voltage: 75 Volts
Forward Current: 150 mA
RoHS Device
Features
- Design for mounting on small surface.
- Fast switching speed.
- High mounting capability, strong surge
withstand, high reliability.
- Comply with AEC-Q101
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Weight: 0.0078 grams(approx.).
Circuit diagram
3
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.118(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
1
2
Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Non-Repetitive peak reverse voltage
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
VRM
VRRM
VRWM
VR
VR(RMS)
100
V
75
V
53
V
Forward continuous current
IFM
300
mA
Average rectified output current
IO
150
mA
Non-repetitive peak forward surge current @t=8.3ms
IFSM
2.0
A
Power dissipation
PD
225
mW
Thermal resistance junction to ambient
RθJA
556
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Reverse breakdown voltage
IR = 100μA
Reverse voltage leakage current
VR = 75V
Forward voltage
Diode Capacitance
IF = 1mA
IF = 10mA
IF = 50mA
IF = 150mA
VR=0V, f=1MHz
Reverse recovery time
IF=IR=10mA, Irr=0.1xIR, RL=100Ω
Symbol
V(BR)
IR
VF
CD
Trr
Min.
75
Max.
1
0.715
0.855
1
1.25
2
6
Unit
V
μA
V
pF
nS
Company reserves the right to improve product design , functions and reliability without notice. REV:A
AQW-B0006
Comchip Technology CO., LTD.
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