A1N4007G-G Datasheet, PDF (1/3 Pages) Comchip Technology – General Purpose Silicon Rectifiers

General Purpose Silicon Rectifiers
A1N4007G-G
Voltage: 1000 V
Current: 1.0 A
RoHS Device
Features
- Low drop down voltage
- High current capability
- Low reverse leakage.
- High forward surge current capability.
- Glass passivated chip junction.
- Comply with AEC-Q101
Mechanical data
- Case: JEDEC DO-41 molded plastic
- Epoxy: UL 94V-0 rate flame retardant
- Terminals: Solderable per MIL-STD-750
method 2026.
- Polarity: Color band denotes cathode end
- Mounting position: Any
- Weight: 0.34 grams(approx. )
DO-41
1.0(25.40) Min.
0.205(5.20)
0.160(4.20)
0.107(2.70)
0.080(2.00)
1.0(25.40) Min.
0.034(0.86)
0.028(0.70)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Conditions
Symbol
Value
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
Maximum instantaneous forward voltage
see figure 1
8.3mS single half sine-wave
superimposed on rated load
(JEDEC Method) TL=110°C
@IF = 1A
VRRM
VRMS
VDC
I(AV)
IFSM
VF
1000
700
1000
1
30
1.1
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
5
IR
50
Typical junction Capacitance
VR = 4V, f = 1MHz
CJ
10
Typical thermal resistance
Junction to ambient
RΘJA
45
Operating junction temperature range
TJ
-55 ~ +125
Storage temperature range
TSTG
-55 ~ +150
Company reserves the right to improve product design , functions and reliability without notice.
AQW-BG001
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
REV:A
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