6A005-G Datasheet, PDF (1/3 Pages) Comchip Technology – General Purpose Silicon Rectifiers

General Purpose Silicon Rectifiers
6A005-G Thru. 6A10-G
Voltage: 50 to 1000 V
Current: 6.0 A
RoHS Device
Features
-Low cost construction.
-Diffused Junction.
-Low forward voltage drop.
-High current capability.
Mechanical data
-Epoxy: UL 94V-0 rate flame retardant
-Case: JEDEC R-6 molded plastic
-Polarity: Color band denotes cathode
-Weight: 0.07ounce, 2.0 grams
-Mounting position: Any
R-6
1.000(25.40) Min.
0.360(9.10)
0.340(8.60)
0.360(9.10)
0.340(8.60)
1.000(25.40) Min.
0.052(1.30)
0.048(1.20)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length @TA=75 ^OC
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum forward voltage at 6.0A DC
Maximum reverse current
TA=25°C
at rated DC blocking voltage
TA=100°C
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
Symbol 6A005-G 6A01-G 6A02-G 6A04-G 6A06-G 6A08-G 6A10-G Unit
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
I(AV)
6.0
A
IFSM
VF
IR
IR
CJ
RθJA
TJ
TSTG
400
1.0
10
100
100
10
-55 ~ +125
-55 ~ +150
A
V
μA
PF
O_C/W
O_C
O_C
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0Volts.
2. Thermal resistance from junction to ambient .
QW-BG014
REV:A
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