2SC5658-HF Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
2SC5658-HF (NPN)
RoHS Device
Halogen Free
Comchip
SMD Diode Specialist
Features
-Low Cob.
Mechanical data
-Case: SOT-723, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
1
2
SOT-723
0.011(0.270)
0.007(0.170)
1
0.049(1.25) 0.031(0.800)
0.045(1.15)
Typ.
2
0.015(0.370)
3 _0.011(0.270)
0.033(0.850)
0.030(0.750)
0.049(1.250)
0.045(1.150)
0.002(0.050)
Max.
0.006(0.15)
Max.
0.020(0.50)
Max.
Absolute Maximum Ratings (at TA=25°C )
Parameter
Symbol Value Unit
Collector-Base voltage
VCBO
60
V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO
7
V
Collector current- continuous
IC
150
mA
Collector dissipation
PC
100
µA
Junction temperature
TJ
150
µA
Storage temperature
TSTG -55 ~ +150 µA
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base breakdown voltage
IC =50μA , IE=0
V(BR)CBO
60
V
Collector-Emitter breakdown voltage
IC =1mA , IB=0
V(BR)CEO
50
V
Emitter-Base breakdown voltage
IE =50μA , IC=0
V(BR)EBO
7
V
Collector cut-off current
VCB=60V , IE=0
ICBO
0.1
µA
Emitter cut-off current
VEB=7V , IC=0
IEBO
0.1
µA
DC current gain
VCE=6V , IC=1mA
hFE
120
560
Collector-Emitter saturation voltage
IC=50mA , IB=5mA
VCE(sat)
0.4
V
Transition frequency
VCE=12V , IC=2mA
fT
f=100MHZ
180
MHZ
Output capacitance
VCB=12V , IE=0
Cob
f=1MHZ
3.5
pF
Rank
Range
Q
120~270
R
180~390
S
270~560
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR07
Comchip Technology CO., LTD.
REV: A
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