2SC3356-G Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
2SC3356-G Series
RoHS Device
Features
- Low noise and high gain.
- High power gain.
- Designed for low noise amplifier.
Circuit Diagram
Collector
3
1
Base
2
Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base voltage
VCBO
Collector-Emitter voltage
VCEO
Emitter-Base voltage
VEBO
Collector current - continuous
IC
Collector dissipation
PC
Junction temperature
TJ
Storage temperature
Tstg
Value
20
12
3
100
200
150
-65~+150
Unit
V
V
V
mA
mW
°C
°C
0.059(1.50)
0.043(1.10)
0.039(1.00)
Typ.
SOT-23
0.122(3.10)
0.106(2.70)
3
1 : BASE
2 : EMITTER
3 : COLLECTOR
1
2
0.079(2.00)
0.071(1.80)
0.004(0.10)
Typ.
0.102(2.60)
0.087(2.20)
0.016(0.40)
Typ.
0.004(0.10)
0.001(0.02) _0.019(0.48)
0.014(0.35)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base breakdown voltage
IC =10μA , IE=0
V(BR)CBO
Collector-Emitter breakdown voltage IC =1mA , IB=0
V(BR)CEO
Emitter-Base breakdown voltage
IE =10μA , IC=0
V(BR)EBO
Collector cut-off current
VCB=10V , IE=0
ICBO
Emitter cut-off current
VEB=1V , IC=0
IEBO
DC current gain
VCE=10V , IC=20mA
hFE
Transition frequency
Insertion power gain
VCE=10V , IC=20mA
VCE=10V , IC=20mA , f=1GHZ
fT
2
|S21e|
Feed-back capacitance
VCB=10V , IE=0 , f=1MHZ
Cre
Noise Figure
VCB=10V , IC=7mA , f=1GHZ
NF
Min
20
12
3
50
Typ
120
7
11.5
0.55
1.1
Max
1
1
300
1.0
2.0
Unit
V
V
V
µA
µA
GHZ
dB
PF
dB
Classification Of hFE
Part No.
Range
Marking
2SC3356Q-G
50-100
R23
2SC3356R-G
80-160
R24
2SC3356S-G
125-250
R25
Company reserves the right to improve product design , functions and reliability without notice. _{REV: A}
QW-BTR48
Comchip Technology CO., LTD.
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