2SC2873-G Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
2SC2873-G Series (NPN)
RoHS Device
Features
- Small flat package
- High speed switching time.
- Low collector-emitter saturation voltage.
Circuit Diagram
1 : BASE
2 : COLLECTOR
3 : EMITTER
1
Base
Collector
2
3
Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base voltage
VCBO
50
V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO
5
V
Collector current
IC
2
A
Collector power dissipation
PD
500
mW
Thermal resistance from
junction to ambient
RθJA
250
°C/W
Junction temperature
TJ
150
°C
Storage temperature
Tstg
-55~+150
°C
SOT-89-3L
0.181(4.60)
0.173(4.40)
0.061(1.55)
REF.
0.102(2.60)
0.091(2.30)
123
0.167(4.25)
0.155(3.94)
0.020(0.52)
0.013(0.32)
0.023(0.58)
0.016(0.40)
0.060(1.50)
TYP.
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.035(0.90)
0.017(0.44)
0.014(0.35)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base breakdown voltage
IC =100μA , IE=0
V(BR)CBO
Collector-Emitter breakdown voltage IC =1mA , IB=0
V(BR)CEO
Emitter-Base breakdown voltage
IE =100μA , IC=0
V(BR)EBO
Collector cut-off current
VCB=50V , IE=0
ICBO
Emitter cut-off current
VEB=5V , IC=0
IEBO
DC current gain
Collector-Emitter saturation voltage
VCE=2V , IC=0.5mA
VCE=2V , IC=2mA
IC=1A , IB=50mA
hFE(1)
hFE(2)
VCE(sat)
Base-Emitter saturation voltage
IC=1A , IB=50mA
VBE(sat)
Transition frequency
Collector output capacitance
VCE=2V , IC=0.5A
fT
VCB=10V, IE=0 , F=1MHZ
Cob
Min
50
50
5
70
20
Typ
120
30
Max
0.1
0.1
240
Unit
V
V
V
µA
µA
0.5
V
1.2
V
MHZ
PF
Classification Of hFE
Part No.
Range
Marking
2SC2873O-G
70-140
MO
2SC2873Y-G
120-240
MY
QW-BTR43
Company reserves the right to improve product design , functions and reliability without notice.
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